TOKYO, Japan -- Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, has announced its decision to withdraw from the LD (laser diode) and PD (photo diode ...
GaAs- and InP-based epitaxial wafer maker LandMark Optoelectronics (LMOC) has obtained orders of LD (laser diode) sensors from a US-based head-mounted device vendor, with trial production to begin in ...
Development led by 2014 Nobel laureate Hiroshi Amano at Institute of Materials & Systems for Sustainability. Nagoya group achieved room-temperature CW lasing of a deep-UV laser diode. A research group ...
The basis of a solid-state diode laser is, of course, the diode. Laser diodes can have different emission wavelength—most of them have between 405 nm to 808 nm. The diodes usually have TO3, TO5, TO9, ...
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