A solid—rather than liquid—electrolyte between the opposite electrodes of a battery should, in theory, enable a rechargeable ...
Abstract: Excess aluminum diffusion is always the main concern in the high-k metal gate (HKMG) process at 28/22nm node. In this work, we try to add extra ALD TaN film before TiAl and Al eletrode and ...
Abstract: Aluminum (Al) is used as the top fill-in metal layer for forming replacement metal gate (RMG) device at 28nm node. Gap fill and Al diffusion are the main concern of this process. A serials ...
Researchers at the Paul Scherrer Institute PSI have achieved a breakthrough on the path to practical application of lithium ...
Artificial intelligence has just helped push one of the world’s most familiar metals into unfamiliar territory. By teaming advanced algorithms with 3D printing, researchers have created a new aluminum ...