Abstract: Experimental development of gate-all-around silicon nanowire field-effect transistors (NWFETs), a viable replacement for FinFETs, can be complemented by technology computer-aided design.

Incorporating modeling and simulation as a routine part of training, experimentation, and new system design has given warfighters opportunities to train on more realistic scenarios than ever before.

Abstract: When selecting the spatial grid size in finite-difference time-domain (FDTD) simulations, it is necessary to balance numerical dispersion and computational resources. Coarser grids are less ...