The innovation is expected to boost the performance of gallium nitride-based radar systems, widely used in China's advanced ...
Ultraviolet-B (UV-B) semiconductor lasers are highly sought for medical, biotechnology, and precision manufacturing applications; however, previous UV-B laser diodes were limited to pulsed operation ...
Scientists can peer into cells to get a limited view of their activity using microscopes and other tools. However, cells and ...
VCG. Chinese researchers have achieved a major breakthrough in semiconductor materials integration by developing an ...
RF front ends are advancing through the integration of high-frequency passive networks with increasingly efficient active devices engineered for ultra-wide bandwidths and constrained power envelopes.
Onsemi has signed a collaboration agreement with GlobalFoundries to develop and manufacture next-generation gallium nitride (GaN) power devices, expanding its power semiconductor portfolio to include ...
onsemi expands its leadership in intelligent power through a new collaboration agreement with GlobalFoundries (GF) to develop and manufacture next-generation gallium nitride (GaN) power devices, ...
Rigorous testing demonstrates the reliability and robustness of commercial 1250 V GaN HEMTs paired with a low-voltage silicon MOSFET to ensure normally-off operation. Material properties govern the ...
(RTTNews) - onsemi and Innoscience on Tuesday announced the signing of a memorandum of understanding (MoU) to evaluate opportunities to accelerate the deployment of GaN power devices, starting with 40 ...
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