The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...
Leveraging ST’s robust silicon-on-insulator (SOI) process, the SRK1004 can control the MOSFET in either low-side or high-side ...
Abstract: This paper proposes a novel silicon carbide (SiC) trench MOSFET with periodically grounded P shield islands (SiC PSI-MOS) based on a secondary epitaxy process. The proposed SiC PSI-MOS ...
V SiC power modules includes a 608-A half-bridge module with 2.4-mΩ on-resistance and best-in-class thermal resistance.
The 3,300- and 2,300-V SiC products from Navitas employ advanced planar device structures and packaging to augment efficiency ...
Solitron Devices, Inc. (OTC Pink: SODI) ('Solitron” or the 'Company”) is pleased to announce fiscal 2026 third quarter results.
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