Abstract: This work presents the design and characterization of modular and compact GaN power ICs with power HEMT, gate driver, temperature sensor, current sense-FET and amplifier. These GaN ICs give ...
Abstract: This work shows the feasibility of a vertically stacked nanosheet field effect transistor (NSFET) for charge-trapping memory and artificial synaptic devices. The artificial synapse’s ...
FET price halted its downtrend by breaking the daily sequence of lower highs and reclaiming former resistance as support. Weekly charts show a downside deviation, with price quickly rejecting lower ...
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