The industry’s answer is gate-all-around (GAA). This design wraps the gate material completely around all sides, including ...
Abstract: Silicon carbide (SiC) power MOSFETs with trench-gate structure have been irradiated with heavy-ion broad beam and microbeam. Microdose effects resulting in higher subthreshold drain leakage ...
Abstract: This article explores the design and experimental validation of an isolated half-bridge DC-DC converter customized for cryogenic environments, addressing the challenges posed by extreme low ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback