For IGBTs, the on-state voltage drop is a critical specification to consider. This drop includes both the diode drop across ...
The DGD0506 and DGD0507 high-frequency gate-driver ICs introduced by Diodes Incorporated are designed for driving two external N-channel MOSFETs in a half-bridge configuration. A 50V rating suits a ...
Compared to traditional silicon, power MOSFETs based on silicon carbide (SiC) can handle higher voltages with lower on-resistance (R DS(on)) and superior thermal conductivity, opening the door to ...
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