Mitsubishi Electric has announced that it will shortly start shipping samples of four new trench SiC-MOSFET bare dies ...

SemiQ’s SOT-227 SiC power modules, which are tested beyond 1,400 V, target battery chargers, photovoltaic inverters, server ...

Mitsubishi Electric Corporation (TOKYO: 6503) announced today that, beginning January 21, it will start shipping samples of four new trench silicon carbide metal-oxide-semiconductor field-effect ...

The 3,300- and 2,300-V SiC products from Navitas employ advanced planar device structures and packaging to augment efficiency ...

IXYS announced the expansion of its high voltage power MOSFET product line, the 2000 V n-channel power MOSFET featuring 1 A current rating specifically designed for high voltage, high speed power ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “TPH3R10AQM,” a 100V N-channel power MOSFET fabricated with Toshiba’s latest-generation ...

In this post I will try to gain some insight into the electronics of a cheap PWM Power MOSFET Module. The module under the spotlight is the pretty common FR120N MOSFET Control Module which is a simple ...

MOSFETs are small but powerful components that act as ultra-fast switches in electronic circuits. In this video, you’ll learn ...

The global power MOSFET market size was US$ 8.6 billion in 2021. The global power MOSFET market size is forecast to reach US$ 13.8 billion by 2030, growing at a compound annual growth rate (CAGR) of 6 ...

Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...

EL SEGUNDO, Calif.--(BUSINESS WIRE)--International Rectifier, IR ® (NYSE:IRF), a world leader in power management technology, today introduced the company’s first family of radiation hardened ...