Abstract: The gallium-nitride (GaN) high-electron-mobility transistors (HEMT) devices have great potential for high-power, high-temperature, and high-frequency applications. However, it is challenging ...
Abstract: Exponential growth in the number of parameters used to train deep neural network (DNN)/machine learning (ML) models for artificial intelligence (AI) training/ inference applications requires ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback