IEEE

Temperature Dependence of Heavy-Ion-Induced Leakage Current in SiC Power MOSFETs

Abstract: Temperature dependence of the heavy-ion-induced leakage current in silicon carbide (SiC) power MOSFETs has been studied. The devices exhibit an order of magnitude lower degradation rate for ...
Electropages

Signal relays deliver a sharper response in a smaller package

OMRON Electronic Components Europe has announced new G3VM MOSFET relays with a tiny footprint, low output capacitance, and fast response for designers tackling demanding applications, including ...
Electronic Specifier

OMRON signal relays deliver sharper response in smaller package

OMRON Electronic Components Europe has revealed new G3VM MOSFET relays with tiny footprint, low output capacitance, and fast ...
Eureka

OMRON Introduces Ultra-Compact MOSFET Relays for High-Speed Test Equipment

OMRON Electronic Components Europe has launched a new range of MOSFET relays for test and measurement, designed to help ...
New Electronics

OMRON’s ultra-compact MOSFET relays target high-speed test equipment

OMRON Electronic Components Europe has introduced a new range of G3VM MOSFET relays designed to deliver faster switching ...
IEEE

Behavior of Split-Gate Trench MOSFETs in Critical Conditions Caused by Distributed Effects

Abstract: The split-gate trench (SGT) MOSFET is a vertical power device having a separate field plate (FP) inside a deep trench. This design increases the breakdown voltage (BV) via the reduced ...