Standalone NPN Market generated USD 7.6 bn in 2024 and is predicted to register growth from USD 9.1 bn in 2025 to about USD ...

Abstract: Transistor characteristics in advanced technology nodes are strongly impacted by devices design and process integration choices. Variation in the layout and pattern configuration in close ...

On Oct. 3, 1950, three scientists at Bell Labs in New Jersey received a U.S. patent for what would become one of the most important inventions of the 20th century — the transistor. John Bardeen, ...

The FinFET three-dimensional transistor architecture has become fundamental to modern semiconductor manufacturing. FinFET (Fin Field-Effect Transistor) represents a revolutionary advancement in ...

Center for Advanced Quantum Studies, Department of Physics, Capital Normal University, Beijing 100875, China CAS Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety, CAS Center for ...

Backside power delivery is being called a game changer — a breakthrough technology and the next great enabler in CMOS scaling. It promises significant PPA advances, including faster switching, lower ...

(Nanowerk Spotlight) Advances in semiconductor technology have reached a critical turning point. Silicon-based transistor technology, central to electronics, faces increasing limitations due to the ...

Abstract: Threshold voltage hysteresis in transistor characteristics is common for CMOS device reliability. Scaling impacts electrostatic performance, prompting reliability analysis. A key check ...

Extending the application range of GaN power devices to higher voltage and power may necessitate the use of the favored vertical geometry. As the voltage range of the device is increased, the drift ...

National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin 150080, China Zhengzhou Research Institute, Harbin Institute of ...