Mitsubishi Electric Corporation (TOKYO: 6503) announced today that, beginning January 21, it will start shipping samples of four new trench silicon carbide metal-oxide-semiconductor field-effect ...

Professor Singisetti at the University at Buffalo discusses the commercialisation path for Gallium Oxide in high-power ...

Researchers at the Department of Energy’s Oak Ridge National Laboratory (ORNL) are utilizing faster circuit breakers to enable and protect the modern electric grid. The ORNL team developed ...

A historic legacy now translates to pioneering capabilities in electric grid technology at the Department of Energy's Oak ...

CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), a leading innovator in gallium nitride (GaN) power devices, has successfully closed a $32 million Series C funding round. The ...

Navitas Semiconductor has announced the launch of its new SiCPAK™ power modules, which utilize innovative epoxy-resin potting technology alongside proprietary trench-assisted planar SiC MOSFET ...

Power electronics and semiconductor devices lie at the heart of modern energy conversion and control systems. Recent advances have focused on utilising wide‐bandgap materials such as silicon carbide ...

Vertical Semiconductor Inc. is hoping to crack the power delivery bottleneck in artificial intelligence data centers after closing on an $11 million seed funding round today. The round was led by ...