Abstract: Impact of strain of sub-3 nm gate-all-around (GAA) CMOS transistors on the circuit performance is evaluated using a neural compact model. The model was trained using 3D technology ...
Designed and simulated all fundamental and universal CMOS logic gates (NOT, AND, OR, NAND, NOR, XOR, XNOR) using the Electric VLSI Design Tool. This project includes schematic design, DRC-clean ...
Abstract: This study introduces a breakthrough achievement of 0.1-Gb/mm2 wing-shaped high-density embedded 3-D via resistive random access memory (Via RRAM) in TSMC’s 16-nm FinFET CMOS logic process.
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