The future of chips: how gate-all-around design is powering the AI era and the next node

The industry’s answer is gate-all-around (GAA). This design wraps the gate material completely around all sides, including ...
IEEE

Deteriorated Non-Linear Interference in 3D NAND Cell With Word-Line Pitch Scaling Due to the Incapability to Turn on Non-Gate-Controlled Region

Abstract: For 3D NAND memory, with continuous word line (WL) pitch scaling, deteriorated WL interference and the impact on triple-level cell (TLC) operation window are anticipated. However, as the WL ...