Abstract: A novel gate diode triggered silicon-controlled rectifier (GDTSCR) with dual-direction high-voltage (HV) electrostatic discharge (ESD) protection and a low snap-back voltage is proposed and ...
Abstract: We examine the electrostatic discharge (ESD) behavior of bottom-gate bottom-contact pentacene organic field-effect transistor (OFET) devices with a parylene-C gate dielectric. A comparison ...
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