Abstract: The complementary field-effect transistor (CFET) with stacked N-type FET (NFET) and P-type FET (PFET) is an attractive approach to shrink the footprint of multiple devices at circuit level ...
Abstract: An accurate physics-based capacitance model is developed covering full-region operations of silicon TFET (Si-TFET) with all biasing conditions. The intrinsic and parasitic capacitances are ...
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