EDN

Synopsys Implementation Solution Included in TSMC 16-nm Reference Flow for FinFET Design

Synopsys, Inc. (Nasdaq: SNPS), a global leader providing software, IP and services used to accelerate innovation in chips and electronic systems, today announced delivery of a comprehensive design ...
Nasdaq

Keysight, Synopsys, and Ansys Accelerate RFIC Semiconductor Design with New Reference Flow for TSMC's Most Advanced 4nm RF FinFET Process

New reference flow offers open, efficient radio frequency design solution that supports streamlined migration from previous process nodes Industry-leading electromagnetic simulation tools boost 5G/6G ...
Business Wire

Cadence Digital, Custom/Analog Design Flows Certified and Design IP Available for Intel 16 FinFET Process

SAN JOSE, Calif.--(BUSINESS WIRE)--Cadence Design Systems, Inc. (Nasdaq: CDNS) today announced its digital and custom/analog flows are certified on the Intel 16 FinFET process technology and its ...
Business Wire

Cadence Achieves EDA Certification for TSMC 5nm and 7nm+ FinFET Process Technologies to Facilitate Mobile and HPC Design Creation

SAN JOSE, Calif.--(BUSINESS WIRE)--Cadence Design Systems, Inc. (NASDAQ:CDNS) today announced its continued collaboration with TSMC to certify its design solutions for TSMC 5nm and 7nm+ FinFET process ...
Semiconductor Engineering

N7 FinFET Self-Aligned Quadruple Patterning Modeling

In this paper, we model fin pitch walk based on a process flow simulation using the Coventor SEMulator3D virtual platform. A taper angle of the fin core is introduced into the model to provide good ...
EDN

Cadence Digital and Custom/Analog Tools Achieve TSMC Certification for 16FF+ Process, Companies Collaborate on 10nm FinFET

The Cadence custom/analog and digital implementation and signoff tools have been validated by TSMC on high-performance reference designs in order to provide customers with the fastest path to design ...
Semiconductor Engineering

Self-aligned Fin Cut Last Patterning Scheme for Fin Arrays of 24nm Pitch and Beyond

In 5nm FinFET technology and beyond, SRAM cell size reduction to 6 tracks is required with a fin pitch of 24nm. Fin depopulation is mandatory to enable area scaling ...
Electronic Design

Emulation-Centric Power Analysis of SoC Designs

How FinFET technology has changed power-consumption analysis. Steps involved in taking a hierarchical approach to performing proper power analysis. Verification expert Lauro Rizzatti recently ...
Nasdaq

Keysight, Synopsys, and Ansys Accelerate RFIC Semiconductor Design with New Reference Flow for TSMC’s Advanced 4nm RF FinFET Process

New reference flow offers open, efficient radio frequency design solution using TSMC N4PRF process Industry-leading electromagnetic simulation tools boost WiFi-7 system performance and power ...