The innovation is expected to boost the performance of gallium nitride-based radar systems, widely used in China's advanced ...
Ultraviolet-B (UV-B) semiconductor lasers are highly sought for medical, biotechnology, and precision manufacturing applications; however, previous UV-B laser diodes were limited to pulsed operation ...
Scientists can peer into cells to get a limited view of their activity using microscopes and other tools. However, cells and ...
VCG. Chinese researchers have achieved a major breakthrough in semiconductor materials integration by developing an ...
Fabio Necco will be taking over from Cambridge GaN Devices’ (CGD) Co-Founder, Giorgia Longobardi, as CEO in 2026. Necco comes to CGD from onsemi where he was Vice President and Division General ...
RF front ends are advancing through the integration of high-frequency passive networks with increasingly efficient active devices engineered for ultra-wide bandwidths and constrained power envelopes.
Abstract: All-GaN-based monolithically integrated circuits can achieve higher switching frequencies and lower losses, but the overcurrent tolerance of GaN-based devices is far inferior to that of ...
Abstract: This article investigates trapping mechanisms in AlGaN/GaN high electron mobility transistors (HEMTs) at cryogenic temperatures (CTs) down to 4.2 K, using pulsed I–V and drain current ...
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