SST and UMC Announce Immediate Availability of 28nm SuperFlash® Gen 4 Automotive Grade 1 Platform

SST developed ESF4 in close partnership with UMC to deliver enhanced embedded non-volatile memory (eNVM) performance and demonstrated reliability for automotive controllers while simultaneously ...
IEEE

Modeling the Operation of Charge Trap Flash Memory: A Monte Carlo Approach to Carrier Distribution and (De)trapping

Abstract: We propose a Monte Carlo framework including (de)trapping to describe the non-equilibrium operation of charge trap flash memories. We thereby base the empirical carrier distribution that was ...
IEEE

Modeling of Trap Generation in 3-D NAND Charge Trap Flash Memory

Abstract: The Reaction-Diffusion-Drift (RDD) framework, implemented in both Sentaurus TCAD and standalone 1-D versions, is used to simulate Program/Erase (P/E) cycling related Tunnel Oxide Trap ...