STMicroelectronics Reveals Tiny, High-Efficiency Synchronous-Rectifier Controllers

Leveraging ST’s robust silicon-on-insulator (SOI) process, the SRK1004 can control the MOSFET in either low-side or high-side ...

EPC2366 eGaN® FET Wins EPDT 2025 Product of the Year Award

The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...
IEEE

Design and Demonstration of a Novel SiC Trench MOSFET with Periodically Grounded P Shield Island Based on Secondary Epitaxy Process

Abstract: This paper proposes a novel silicon carbide (SiC) trench MOSFET with periodically grounded P shield islands (SiC PSI-MOS) based on a secondary epitaxy process. The proposed SiC PSI-MOS ...
Electronic Design

UHV SiC Devices Geared Toward Mission-Critical Energy Infrastructure Apps

The 3,300- and 2,300-V SiC products from Navitas employ advanced planar device structures and packaging to augment efficiency ...
The Manila Times

Solitron Devices, Inc. Announces Fiscal 2026 Third Quarter Results

Solitron Devices, Inc. (OTC Pink: SODI) ('Solitron” or the 'Company”) is pleased to announce fiscal 2026 third quarter results.
Electronic Design

1,200-V Gen3 SiC MOSFET Modules Boost Reliability, Lower On-Resistance

SemiQ’s SOT-227 SiC power modules, which are tested beyond 1,400 V, target battery chargers, photovoltaic inverters, server ...
IEEE

Evaluations of Gate Oxide Reliability in SiC MOSFETs Under Extremely High Gate Voltage Stress

Abstract: This study aimed to evaluate the reliability of Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) under extremely high gate voltage stress. The research ...