The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...
The industry’s answer is gate-all-around (GAA). This design wraps the gate material completely around all sides, including ...
From a specification standpoint, Weebit reports write speeds up to 100x faster than embedded flash, alongside endurance ...
Flexible, hydrogel-based transistors that can host living cells point to a new class of bio-integrated electronics, blurring ...
Morning Overview on MSN
MIT’s chip stacking leap could slash energy use for hungry AI chips
Artificial intelligence is colliding with a hard physical limit: the energy it takes to move data on and off chips. Training ...
Engineers from MIT say that stacking circuit components on top of each other could be the answer to creating more ...
Standalone NPN Market generated USD 7.6 bn in 2024 and is predicted to register growth from USD 9.1 bn in 2025 to about USD ...
Abstract: In this work, we demonstrated bipolar resistive switching (RS) in van der Waals metals [tantalum di-sulfide (2H-TaS2), tantalum di-selenide (2H-TaSe2)], and their heterostructures ...
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