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Abstract: This paper aims to investigate the challenges and feasibility of using 650V gallium nitride (GaN) high-electron-mobility transistors (HEMT) for multi-kilowatt (kW) power conversion at ...

Abstract: Large periphery GaN HEMT switches were designed and fabricated using field-plated gates on semi-insulating SiC substrates. The device layout was designed to handle both large currents and ...